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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor VOL TA GE 50 Vo l t s APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHEMB3PT CURRENT 100 m A m p er e FEATURE * Small surface mounting type. (SOT-563) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Both the CHDTA143T in one package. Built in bias resistor(R1=4.7k, Typ. ) SOT-563 (1) (5) 0.9~1.1 0.15~0.3 (3) (4) 0.50 0.50 1.5~1.7 MARKING * B3 1.1~1.3 0.5~0.6 0.09~0.18 6 R1 4 CIRCUIT 1.5~1.7 R1 1 3 Dimensions in millimeters SOT-563 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-07 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS -50 -50 -5 VALUE V V V mA UNIT -100 Tamb 25 OC, Note 1 150 -55 +150 -55 +150 junction - soldering point 140 mW O C O C C/W O RATING CHARACTERISTIC ( CHEMB3PT ) CHARA CTERISTICS Tamb = 25 C unless otherwise specied. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency CONDITIONS IC= -50uA IE= -50uA IC= -5mA; IB= -0.25mA VCB= -50V VEB= -4V IC= -1mA; VCE= -5.0V IE=5mA, VCE= -10.0V f=100MHz = MIN. -50.0 -50.0 -5.0 - - - 100 3.29 - - - - - - - 250 4.7 250 TY P . - - - -0.3 -0.5 -0.5 600 6.11 - K MHz MAX. V V V V uA uA UNIT Collector-Emitter breakdown voltage IC= -1mA Not e 1.Pulse test: tp300uS; 0.02. RATING CHARACTERISTIC CURVES ( CHEMB3PT ) Typical Electrical Characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 DC current gain vs. collector current 1k 500 DC CURRENT GAIN : hFE Fig.2 Collector-emitter saturation voltage vs. collector current -1 lC/lB=20 -500m -200m -100m -50m -20m -10m -5m -2m -1m -100u -500u -1m -5m -10m -50m -100m 100OC 25OC -40 OC VCE=-5V 200 100 50 20 10 5 2 1 -100u -1m -5m -10m -50m -100m Ta=100OC 25OC -40OC COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) |
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